SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

• Main Authors: HORIKAWA HIDEAKI, YAMADA MITSUSHI, KAMIJO TAKESHI, SHIN EIKON
• Format: Patent
• Language: English
• Published: 08.04.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PURPOSE:To make the high output actuation of the title laser feasible by a method wherein a strained quantaum well active layer is to be bent-structured so that the refractive index may be distributed in the horizontal direction thereby enhancing the heat radiation. CONSTITUTION:A p-GaAs buffer layer 32 and a p-InGaP clad layer 34 thereon are formed on a p-GaAs substrate 30. Next, n-InGaP current block layer 38 is formed on the clad layer 34 holding a GaAs etching stop layer 36 on the clad layer 34. At this time, a trench 42 is formed passing through the current block layer 38 and an etching stop layer 36 so as to expose the clad layer 34. Accordingly, a dent corresponding to the trench 42 formed in the current block layer 38 is formed in another clad layer 44. On the other hand, a strained quantum well active layer 46 is to be bent-structured corresponding to the dent in the clad layer 44. Resultantly, an effective difference in the horizontal direction may be made in the refractive index so that the beams may be sealed up to cause the basic lateral mode oscillation. Furthermore, the whole surface of the element may be almost flattedned thereby enabling the heat generated inside the element to be easily radiated outward.