HIGH GAIN PHOTOELECTRIC CONVERSION DEVICE AND LAMINATED SOLID-STATE IMAGE PICK-UP DEVICE

PURPOSE:To ensure a sufficient optical amplification gain in a photoelectric conversion device with an application bias less than half of film application voltage needed to produce conventional avalanche amplification. CONSTITUTION:A high gain photoelectric conversion device is constructed with an u...

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Bibliographic Details
Main Authors YAMAWAKI MASAO, IPPOSHI TAKASHI, KOSUGI MITSUO, TANAKA KATSU, ANDO FUMIHIKO
Format Patent
LanguageEnglish
Published 08.04.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
COLORIMETRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
PHYSICS
RADIATION PYROMETRY
SEMICONDUCTOR DEVICES
TESTING
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Summary:PURPOSE:To ensure a sufficient optical amplification gain in a photoelectric conversion device with an application bias less than half of film application voltage needed to produce conventional avalanche amplification. CONSTITUTION:A high gain photoelectric conversion device is constructed with an upper transparent electrode 1 constructed with an IFO, a 100Angstrom thickness hole infection prevention reinforcing layer 2 constructed with CeO2, an optical conductive film 3 including 1.6mum thick a-Se (amorphous-celenium) as a chief component, and a base electrode titanium silicide 4.
Bibliography:Application Number: JP19920243323