MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To eliminate the occurrence of a tail, crystal defect, thickness fluctuation of a base, etc., caused by ion implantation by leaving part of a substrate as a starting material for a base. CONSTITUTION:A buried layer 23 of the second conductivity is formed on one surface of a substrate 21 of t...

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Bibliographic Details
Main Author HARIKI TOSHIO
Format Patent
LanguageEnglish
Published 29.03.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To eliminate the occurrence of a tail, crystal defect, thickness fluctuation of a base, etc., caused by ion implantation by leaving part of a substrate as a starting material for a base. CONSTITUTION:A buried layer 23 of the second conductivity is formed on one surface of a substrate 21 of the first conductivity having a base concentration and a groove 25 is formed to a depth equal to a base depth from the surface of the layer 23. After forming the groove 25, an oxide film 24 is formed on the internal surface of the groove 25 and surface of the layer 23. Then the upper surface of the film 24 is coated with polysilicon 26 and a semiconductor wafer 27 is stuck to the upper surface of the polysilicon 26. Thereafter, one or two or more islands 28 separated from each other by the oxide film 24 are formed by cutting and grinding the substrate 21 from the rear side until the oxide film 24 in the groove 25 is reached and a transistor which uses part of the substrate 21 as its base 33 is formed in the island 28. Therefore, the occurrence of a tail, crystal defect, thickness fluctuation of the base, etc., caused by ion implantation can be eliminated.
Bibliography:Application Number: JP19910018294