PLASMA CVD DEVICE

PURPOSE:To form a uniform film for a substrate having an undercut by a method wherein a film-formed substrate placed on an electrode is not only rotated round an axis perpendicular to the electrode surface but also swung within a scope of a predetermined angle around an axis in parallel to the elect...

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Bibliographic Details
Main Author INAGAKI AKIO
Format Patent
LanguageEnglish
Published 29.03.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To form a uniform film for a substrate having an undercut by a method wherein a film-formed substrate placed on an electrode is not only rotated round an axis perpendicular to the electrode surface but also swung within a scope of a predetermined angle around an axis in parallel to the electrode surface. CONSTITUTION:In a plasma CVD device, two sheets of parallel electrode 2, 3 are opposed to each other in a vacuum chamber 1 and the inside of the vacuum chamber is vacuum-discharged from a vacuum exhaust port 6, while reaction gas is introduced from a gas induction port 7, and in a condition that a heater 4 is on, a high frequency power is applied to a high frequency electrode 2 by a high frequency power source 8, whereby an electric discharge is performed to deposit a silicon nitrided film on a film-formed substrate 5 by plasma reaction. In this embodiment, inside an opening of a lower electrode 3, a supporting pedestral which freely-swing within a predetermined scope around an axis in parallel to the surface of the electrode 3 is provided and the substrates 5 are respectively placed. It is possible to realize a rotation round a vertical axis of the electrode 3 and a film having high uniformity by swing the supporting pedestral 9.
Bibliography:Application Number: JP19920238713