DAMAGE EVALUATION IN THE VICINITY OF SEMICONDUCTOR SURFACE

PURPOSE:To evaluate the surfacial damages which are formed during plasma treatment in semiconductor fabrication process and are not observed sufficiently by a conventional electron spin resonance method. CONSTITUTION:A thin film such as an oxide film 4 is formed on the damaged surface of a crystal s...

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Bibliographic Details
Main Authors YOKOGAWA KATANOBU, MIZUTANI TATSUMI
Format Patent
LanguageEnglish
Published 22.03.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:PURPOSE:To evaluate the surfacial damages which are formed during plasma treatment in semiconductor fabrication process and are not observed sufficiently by a conventional electron spin resonance method. CONSTITUTION:A thin film such as an oxide film 4 is formed on the damaged surface of a crystal substrate. The dangling bond formed in the interface between the thin film 4 and the semiconductor substrate 1 is observed by an electron spin resonance method and, based on the width 7-8 of electron spin resonance spectrum and anisotropic property, the damges of the vicinity of the surface of the semiconductor substrate are evaluated.
Bibliography:Application Number: JP19920236866