FORMATION METHOD OF TANTALUM OXIDE THIN FILM

• Main Authors: KITAGAWA MASATOSHI, HIRAO TAKASHI, KAMATA TAKESHI, SHIBUYA MUNEHIRO
• Format: Patent
• Language: English
• Published: 04.03.1994
• Edition: 5
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To form a capacitor whose effective permittivity is large by a method wherein Ta(OC2H5)5 and an inert gas Ar are introduced into a vacuum chamber, a gas containing oxygen such as O2 or the like is not introduced and a tantalum oxide thin film is formed at a specific temperature or higher. CONSTITUTION:A substrate 5 is attached to a substrate holder 15 and installed inside a vacuum chamber 1. The vacuum chamber 1 is made vacuum by an evacuation device and heated to about 600 deg.C by a heater 6. The temperature of Ta(OC2H5)5 as an organic tantalum compound inside an ampule 3 is controlled to 120 deg.C by a thermostatic tank 7, and an inert gas such as He, Ar or the like is bubbled by a flow-rate control device 8. In addition, the inert gas is heated to about 150 deg.C by a heater 9 and introduced into the vacuum chamber 1 through an introduction pipe 10. A raw-material gas which has been introduced into the vacuum chamber 1 is pyrolyzed, reacted and deposited as a tantalum oxide thin film on the substrate 5. Thereby, it is possible to restrain that SiO2 is formed at the interface between polysilicon and the tantalum oxide thin film and to form a capacitor whose capacitance is large.