FORMATION OF TANTALUM OXIDE THIN FILM

• Main Authors: KITAGAWA MASATOSHI, HIRAO TAKASHI, KAMATA TAKESHI, SHIBUYA MUNEHIRO
• Format: Patent
• Language: English
• Published: 01.03.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To form a tantalum oxide thin film capable of being utilized as the capacitative insulating film of a DRAM and low in leakage current while untreated. CONSTITUTION:A raw gas is introduced into a vacuum chamber 1 and thermally decomposed to form a tantalum oxide thin film by CVD. In this case, at least Ta(OC2H5)5 and TiCl4 or SiH4 are introduced into the vacuum chamber as the raw gases and thermally decomposed to deposit a tantalum oxide thin film contg. Ti or Si on a substrate 5. Si or Ti is incorporated into the thin film to compensate the lattice defect or to relieve stress, and hence a tantalum oxide thin film low in leakage current is formed.