MANUFACTURE OF AMORPHOUS SEMICONDUCTOR THIN FILM

• Main Authors: KITAGAWA MASATOSHI, HIRAO TAKASHI, KAMATA TAKESHI, SHIBUYA MUNEHIRO
• Format: Patent
• Language: English
• Published: 18.02.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain an amorphous semiconductor thin film having high quality at a high temperature by incorporating a short wavelength light source in an electrode, and applying optical energy to a deposited surface of the film. CONSTITUTION:An electric field is applied from a power source to an electrode and substrate holder 15 through an electrode 13. A short wavelength light source 16 such as a low-pressure mercury lamp, etc., is incorporated in the electric field applying electrode 13, and a discharge surface 17 of the electrode 13 is formed of a metal mesh, etc. Thus, a plasma region P between the electrodes 13 and 15 is irradiated with a light generated from the source 16 through the mesh perpendicularly to a substrate 20. Material gas 14 or other gas is introduced from a gas inlet 18 to plasma decompose it, and the substrate is simultaneously irradiated with a light from the source 16 to be deposited with a film.