SEMICONDUCTOR MANUFACTURE DEVICE AND MANUFACTURE OF SEMICONDUCTOR

• Main Authors: BANJO TOSHINOBU, KAWADA YOSHINOBU
• Format: Patent
• Language: English
• Published: 02.12.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To prevent unnecessary materials such as reaction products from invading into a substrate supporting surface by providing a substrate supporting means with a pocket communicating with an external decompressing means and assigning an inactive gas outflowing hole around the pocket, so that inactive gas goes out of it. CONSTITUTION:While the main surface 14 of a semiconductor substrate 8 is processed, the inactive gas supplied from an inactive gas supply device passes through a radial groove flow path 50 and an inactive gas introduction hole 52. It is jetted from an inactive gas jetting gap 31 toward a reaction chamber 6. Thus, the reaction sub-product 34 floating around a stage 10, blocked by jetted inactive gas, does not invade in between the bottom surface of the stage 10 and the semiconductor substrate 8. Even the reaction sub-product gradually sticks to the periphery of the stage 10, the reaction sub-product accumulated around the stage 10 does not invade in between the bottom surface of the stage 10 and the semiconductor substrate 8.