JPH0633238B

PURPOSE:To obtain a high purity SiC whisker containing remarkably reduced content of SiO2 of an impurity, by reacting moldings of a solid silicon-containing raw material with a powdery carbon raw material while heating and heating, gasifying and removing an unreacted carbon under a steam-containing...

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Bibliographic Details
Main Author YURA KEITA
Format Patent
LanguageEnglish
Published 02.05.1994
Edition5
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:PURPOSE:To obtain a high purity SiC whisker containing remarkably reduced content of SiO2 of an impurity, by reacting moldings of a solid silicon-containing raw material with a powdery carbon raw material while heating and heating, gasifying and removing an unreacted carbon under a steam-containing atmosphere. CONSTITUTION:Moldings of silicon-containing raw material such as silica, silica glass sand, agalmatotite etc., are reacted with a powdery carbon-containing raw material under a H2 gas atmosphere, preferably at 1,500-1,700 deg.C to provide a SiC whisker. Then, the resultant reaction product is heated under an atmosphere consisting of steam or steam and inert gas at a prescribed temperature to gasify and remove an unreacted carbon material. Thus, the SiC whisker containing remarkably reduced SiO2 content as an impurity is obtained.
Bibliography:Application Number: JP19860247117