MANUFACTURE OF PHOTOVOLTAIC DEVICE
PURPOSE:To prevent damage to a lower layer under an unnecessary part by applying pulse laser of a short wavelength not exceeding a specified value having a pulse half band width not exceeding a specified value when separating a conductor layer, a semiconductor layer and a transparent conductive laye...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
08.11.1994
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To prevent damage to a lower layer under an unnecessary part by applying pulse laser of a short wavelength not exceeding a specified value having a pulse half band width not exceeding a specified value when separating a conductor layer, a semiconductor layer and a transparent conductive layer. CONSTITUTION:After a conductive layer 14 is formed on an insulating substrate 12, laser beam is applied to a separation part 14a to remove an unnecessary part. A semiconductor layer 16 is formed as a lamination on the conductor layer 14, laser beam is applied to a separation part 16a and an unnecessary part of a semiconductor film is removed. A transparent conductive film is formed all over a surface of the insulating substrate 12 including a surface of the semiconductor layer 16, a separation part 18a of the transparent conductive film is removed by applying a laser beam and a separate transparent conductive layer 18 is formed by separation. In the process, a wavelength of the laser beam is 0.36mum or less and a pulse half band width thereof is 40nsec or less. It is thereby possible to prevent shortcircuiting trouble of laser application and thermal damage of a lower layer. |
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Bibliography: | Application Number: JP19930103878 |