MANUFACTURE OF PHOTOVOLTAIC DEVICE

PURPOSE:To prevent damage to a lower layer under an unnecessary part by applying pulse laser of a short wavelength not exceeding a specified value having a pulse half band width not exceeding a specified value when separating a conductor layer, a semiconductor layer and a transparent conductive laye...

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Bibliographic Details
Main Authors KIYAMA SEIICHI, YAMAMOTO KEISHO, HOSOKAWA HIROSHI
Format Patent
LanguageEnglish
Published 08.11.1994
Edition5
Subjects
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Summary:PURPOSE:To prevent damage to a lower layer under an unnecessary part by applying pulse laser of a short wavelength not exceeding a specified value having a pulse half band width not exceeding a specified value when separating a conductor layer, a semiconductor layer and a transparent conductive layer. CONSTITUTION:After a conductive layer 14 is formed on an insulating substrate 12, laser beam is applied to a separation part 14a to remove an unnecessary part. A semiconductor layer 16 is formed as a lamination on the conductor layer 14, laser beam is applied to a separation part 16a and an unnecessary part of a semiconductor film is removed. A transparent conductive film is formed all over a surface of the insulating substrate 12 including a surface of the semiconductor layer 16, a separation part 18a of the transparent conductive film is removed by applying a laser beam and a separate transparent conductive layer 18 is formed by separation. In the process, a wavelength of the laser beam is 0.36mum or less and a pulse half band width thereof is 40nsec or less. It is thereby possible to prevent shortcircuiting trouble of laser application and thermal damage of a lower layer.
Bibliography:Application Number: JP19930103878