MANUFACTURE OF LIQUID CRYSTAL DISPLAY DEVICE

PURPOSE: To avoid the current effect of a transparent electrode and reduce the contact resistance of a source/drain by depositing a heavily doped semicon ductor layer and metal on the entire surface and selectively etching to form data lines and source electrodes connected to source regions. CONSTIT...

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Bibliographic Details
Main Author YANA AKIHIDE
Format Patent
LanguageEnglish
Published 21.10.1994
Edition5
Subjects
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Summary:PURPOSE: To avoid the current effect of a transparent electrode and reduce the contact resistance of a source/drain by depositing a heavily doped semicon ductor layer and metal on the entire surface and selectively etching to form data lines and source electrodes connected to source regions. CONSTITUTION: After continuously depositing a heavily doped n-type polycrystalline Si 11 and metal 12 such as Al, a photosensitive film 13 is coated thereon, exposed and developed. When this film 13 is developed, the electrolyte of the developer liq. will lower along the Al bank but never contacts a transparent electrode 9 as the Si 11 acts as a barriers, thus preventing the current effect. The heavily doped n-type polycrystalline Si 11 directly contacts drain/ source regions 6a, 6b to facilitate the contact resistance control. The Si 11 and metal layer 12 are laminated to form a double structure which prevents the short-circuit.
Bibliography:Application Number: JP19930346351