DEVICE FOR GENERATING PLASMA EXCITED BY ELECTRON BEAM

• Main Authors: BAN MASAHITO, HARA TAMIO, HAMAGAKI MANABU, HIROSHIMA YASUSHI, SAKIYAMA MASAYUKI, RIYUUJI MAKOTO
• Format: Patent
• Language: English
• Published: 04.10.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GAMMA RAY OR X-RAY MICROSCOPES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; IRRADIATION DEVICES; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; PHYSICS; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR

PURPOSE:To carry out good dry etching of a substrate material under masking by lowering ion energy while suppressing the quantity of arrival of the incident electrons from an electron beam acceleration region at a target sample and generating high-density plasma by lowering the electron temp. in a reaction chamber in the device for generating the plasma excited by electron beams having excellent performance. CONSTITUTION:The front part of the sample 11 in the reaction chamber 8 is provided with magnets 13, 13' facing each other inside and outside a casing 9. The incident electrons 4 from the electron beam acceleration region 7 are trapped by magnetic lines 14 of force of these magnets as magnetic filters and are uniformly distributed in the front part of the sample, and, the quantity of the arrival of the electrons 4 at the target sample is suppressed, and the electron temp. in the reaction chamber 8 is lowered. The electron temp. is lowered, while the high-density plasma is formed in the reaction chamber 8, the dry etching efficiency by the ions of low energy is enhanced, and the selection ratio is increased. The working of the target sample is thereby controlled and the production ratio of the sample is increased.