DEVICE FOR GENERATING ION PLASMA EXCITED BY ELECTRON BEAM

• Main Authors: HARA TAMIO, HAMAGAKI MANABU, YAMADA TAKESHI, HIROSHIMA YASUSHI, RIYUUJI MAKOTO, TOKAI MASAKUNI
• Format: Patent
• Language: English
• Published: 04.10.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GAMMA RAY OR X-RAY MICROSCOPES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; IRRADIATION DEVICES; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; PHYSICS; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR

PURPOSE:To adjust the plasma distribution in the ion forming region of the device for generating the ion plasma excited by electron beams so as to uniformalize the distribution over a wide area. CONSTITUTION:The plasma 19' in the ion forming region 10 is adjusted to the uniformly distributed state over the large area in the transverse direction and also to the distributed density as uniform as possible in, the longitudinal direction, thereby, the adequate construction and arrangement of multipole magnets 16', 16'' are enabled, magnetic fields are thus put into an optimum forming state so that the back multipoles 20' are omitted, and a reverse magnetic field coil 17' is made freely movable in the longitudinal direction, and in addition, the incidence of the electron beams are made plural by disposing electron beam sources in plural positions. The high-density plasma is formed uniformly in the large area in the ion forming region 10 more efficiently than heretofore. Fine dry etching as designed is executed at a high speed with high accuracy in the state of maintaining a high selection ratio of a target sample 14 to a mask material and a substrate material to be etched.