METAL PARTICLE DEPOSITING DEVICE

• Main Authors: FUCHIDA HIDETSUGU, OBINATA HISAHARU, MIYATA MASAHIRO, EZAWA HIROKAZU, KASHIYUU SEIICHIROU, FUKUHARA SEITA
• Format: Patent
• Language: English
• Published: 04.10.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To form a metal electrode without the spread of its foot part on a pad electrode of a semiconductor element. CONSTITUTION:A nozzle 12 having first and second horizontal holes 12a, 12b in the side wall near the top end is moved above an Al pad electrode 14. Then, Au vapor is obtd. by vaporizing a vapor source in an atmosphere of He gas 17 and the Au vapor is primarily condensed to obtain Au fine particles 16. Then, the Au fine particles 16 with He gas 17 are injected through the top end of the nozzle 12 to the Al pad electrode 14. In this process, a part of the He gas 17 which is lighter than Au fine particles 16 is made to flow through holes 12a, 12b but Au fine particles 16 are made to flow straight by the inertial force. Thereby, the Au fine particles 16 are deposited on the Al pad electrode 14, and as a result, a bump electrode 19 is formed on the Al pad electrode 14. Thus, the obtd. metal electrode without the spread of the foot part is formed on the pad electrode of a semiconductor element.