REPRODUCTION OF RELIEF PATTERN

• Main Author: KUWABARA YUKO
• Format: Patent
• Language: English
• Published: 09.09.1994
• Edition: 5
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHIC PROCESSES OR APPARATUS; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

PURPOSE:To easily and safely reproduce defectless relief patterns by interposing an uncured resin between an original plate and a substrate for reproduction and irradiating this resin with UV rays or electron beams to properly cure the resin, then peeling this original plate and the substrate for reproduction and dipping the remaining resist into a peeling liquid to remove the resist. CONSTITUTION:A chromium mask 4 having patterns 5 formed on it and a dry plate 3 formed by laminating the positive type resist on a glass substrate 1 are brought into tight contact with each other opposite to each other and are then irradiated with the UV light 6 and developed to produce the original plate having the relief patterns 7 formed on it. The substrate 8 for reproduction is then pressed to this original plate so as to face the original plate by interposing the uncured resin 9 therebetween and thereafter, the resin 9 is cured by irradiation with the UV light or electron beams. This irradiation is regulated to the extent that the resist 7 is made easily soluble in a solvent and is destroyed at the time of peeling. Consequently, the cured relief patterns 10 are not destroyed at all and rather the destroyed resist 11 remains at the edges, etc., of the pattern when the substrate 8 reproduced from the original plate is peeled. The remaining resist is easily removable by the peeling liquid.