FORMATION OF CUTTING LINE FOR RELIEF PATTERN

PURPOSE:To easily form cutting lines at exact positions with respect to laid out patterns by forming the cutting lines on the same plane as the plane of the patterns at the time of forming the relief patterns. CONSTITUTION:A dry plate 12 is formed by coating the surface of a glass substrate 10 with...

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Bibliographic Details
Main Author KUWABARA YUKO
Format Patent
LanguageEnglish
Published 09.09.1994
Edition5
Subjects
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Summary:PURPOSE:To easily form cutting lines at exact positions with respect to laid out patterns by forming the cutting lines on the same plane as the plane of the patterns at the time of forming the relief patterns. CONSTITUTION:A dry plate 12 is formed by coating the surface of a glass substrate 10 with a positive type resist layer 11. A chromium mask 13 consisting of an amplitude hologram having the patterns 14 obtained by binarizing interference fringes to darkness and brightness formed on it, is prepd. The chromium mask surface thereof is brought into tight contact with the dry plate 12 and is irradiated with UV rays. The parts 16 corresponding to the cutting lines are previously formed on the chromium mask 13 by etching chromium. This dry plate is developed, to obtain the relief hologram lens having the relief patterns 18 and the cutting lines 1 integrally formed on the same plane, is obtd. The cutting lines are formed simultaneously with the pattern formation by one time of the stage in such a manner. There is no need for aligning and the formation of the cutting lines in the exact position is possible.
Bibliography:Application Number: JP19930031962