METHOD FOR GROWING SINGLE CRYSTAL

• Main Authors: ODA OSAMU, KOHIRO KENJI, UCHIDA MASAYUKI
• Format: Patent
• Language: English
• Published: 30.08.1994
• Edition: 5
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To obtain a single crystal having uniform composition by melting a multi-element type compound raw material having prescribed composition ratio, feeding a solute raw material from the upper face of the raw material melt and growing a multi-element type compound single crystal while preventing the change of composition of the raw material melt. CONSTITUTION:A multi-element type compound raw material having a prescribed composition ratio is packed in a crucible 2 installed in a high pressure vessel 1 and the raw material is melted by sending electricity to a heater 3 for heating the interior of furnace to form a raw material melt 6. A liquid sealant 7 is placed on this raw material melt 6 and a seed crystal 4 is placed on the bottom. The crucible 2 is rotated through a rod shaft mechanism and simultaneously gradually cooled from the lower part of the crucible 2 while controlling output of the heater 3 by monitoring the temperature of the melt 6 by a temperature sensor 10 to grow a multi-element type compound single crystal 5 and simultaneously composition ratio of the single crystal 5 is kept definite while preventing the change of composition of the raw material melt 6 accompanied by growth of the single crystal by feeding a solute raw material 8 from the upper face of the raw material melt 6 in the crucible 2.