SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

• Main Authors: OOGAYA KAORU, MAEHARA MASAAKI
• Format: Patent
• Language: English
• Published: 12.08.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To make the depths of connection holes small and uniform and improve the yield of the connection hole, by providing dummy wirings under the connection holes respectively. CONSTITUTION:A semiconductor integrated circuit device, which is provided with connection holes for connecting in an electroconductive way the conductive layer over an insulation film with the one under the insulation film, has a silicon oxide film 12 formed in the upper part of an Si substrate 20, a connection hole 13 pattern-cut in the silicon oxide film 12 whereby a gate electrode 11 and a first layer wiring 14 are connected, and a connection hole 16 pattern-cut in an interlayer insulation film 15 whereby the first layer wiring 14 and a second layer wiring 17 are connected. Further, in this semiconductor integrated circuit device, connection holes 19a, 19b, 19c pattern-cut in an interlayer insulation film 18 whereby the second layer wiring 17 and a third layer wiring are connected are formed, and moreover, dummy wirings 14a, 14b provided in the interlayer insulation film 15 which are laid respectively just under the connection holes 19a, 19b are formed.