PURIFICATION OF TANTALUM ALKOXIDE, HIGH-PURITY TANTALUM ALKOXIDE AND GAS PHASE GROWTH USING THE SAME MATERIAL

• Main Authors: SUZUKI TOSHIYUKI, NAKAMURA KOICHI, KUROKI MASAMI
• Format: Patent
• Language: English
• Published: 09.08.1994
• Edition: 5
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To produce the subject high-purity alkoxide capable of forming an oxide film excellent in, e.g. smoothness and fine-processability and useful for an integrated circuit device, etc., by applying a treatment with a specified compound for purification and remarkably reducing the content of chlorine. CONSTITUTION:The objective alkoxide reduced in the chlorine content to preferably <=10ppm is obtained by treating a chlorine-containing tantalum alkoxide with a metal hydride such as lithium hydride or a metal hydride complex such as sodium hydrogenated bis(2-methoxyethoxy) aluminum. Formation of a tantalum oxide film on a base is carried out preferably by using the objective alkoxide according to a gas phase growth method, e.g. the thermal CVD method or the light CVD method.