PHOTO-CVD APPARATUS

• Main Authors: YAMAGUCHI RYOSUKE, YUASA HIROSHI
• Format: Patent
• Language: English
• Published: 11.01.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To provide a photo-CVD apparatus suitable for preventing the clogging of a gas blow-off hole and a gas supply pipe of reaction gas even when film forming is continued for a long time. CONSTITUTION:Gas supplied to a reaction chamber 1 is irradiated with light from a light source 3 through a light inputting window 2 to accelerate chemical reaction, causing a thin film to be deposited on a substrate 4. Reaction gas which can cause a clouding of the windowpane as a simple substance, e.g. monosilane A diluted with gaseous nitrogen is supplied from a gas supply pipe 6 through a gas blow-off hole 8 consisting of a perforated plate. Reaction gas which does not cause a clouding of the windowpane as a simple substance, e.g. oxygen B diluted with gaseous nitrogen is supplied from a gas supply pipe 7 though a gas blow-off hole 9 consisting of a perforated plate. A partition plate 10 projected from between the gas blow-off holes 8, 9 to inside the reaction chamber 1 is provided to prevent gas counter diffusion near the gas blow-off holes 8, 9.