MANUFACTURE OF THIN FILM TRANSISTOR

PURPOSE: To improve the image and performance of an image display device by improving the interface state between the active layer and the gate insulation film of a thinfilm transistor and then improving the characteristics of the thin- film transistor. CONSTITUTION: A buffer layers 12 and a polycry...

Full description

Saved in:
Bibliographic Details
Main Author YANA AKIHIDE
Format Patent
LanguageEnglish
Published 26.07.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE: To improve the image and performance of an image display device by improving the interface state between the active layer and the gate insulation film of a thinfilm transistor and then improving the characteristics of the thin- film transistor. CONSTITUTION: A buffer layers 12 and a polycrystal silicon are successively formed on the entire surface of a substrate 11 and the unneeded part of the polycrystal silicon layer is eliminated, thus forming an active layer 13a. Then, an amorphous silicon layer is formed on an entire surface and is thermally oxidized to form a gate insulation film. Further, a gate electrode 16 is formed on the gate insulation film on the central part of the active layer and first and second impurity regions 17a and 17b are formed at active layers at both sides of the gate electrode 16.
Bibliography:Application Number: JP19930246723