RESIST REMOVING METHOD

PURPOSE:To provide the resist removing method capable of completely releasing and removing the resist variously denatured during the formation step of semiconductor chip, causing no damage to an underneath film, etc., and leaving no residue at all. CONSTITUTION:Resist 14 is removed by ashing step by...

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Bibliographic Details
Main Author KASE MASA
Format Patent
LanguageEnglish
Published 14.06.1994
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To provide the resist removing method capable of completely releasing and removing the resist variously denatured during the formation step of semiconductor chip, causing no damage to an underneath film, etc., and leaving no residue at all. CONSTITUTION:Resist 14 is removed by ashing step by plasma produced by discharging a mixed gas of O2 and F base gas while sustaining a semiconductor substrate 11 coated with the resist 14 at a specific temperature. Next, a residue 15 produced in steps is removed by pickling step. The resist 14 denatured by dry-etching step, etc., is removed by using the mixed gas of O2 and F base gas for the ashing step. Furthermore, the temperature of the semiconductor 11 during the ashing step 18 kept at a specific temperature so that the damage to an underneath SiO2 film 12 may be suppressed as well as enabling the residue 15 due to the ashing step to be removed by pickling step.
Bibliography:Application Number: JP19920345264