METHOD FOR EVALUATING SEMICONDUCTOR DEVICE

• Main Author: KAMEYAMA TAKEHIKO
• Format: Patent
• Language: English
• Published: 07.06.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MEASURING; MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PURPOSE:To accurately evaluate the high-frequency characteristic of a semiconductor device by measuring the changes in current/voltage characteristics of the device before and after a reverse voltage is applied to the gate of the device. CONSTITUTION:The gate voltage (pinch-off voltage VP1) when, for example, a 5-V voltage is applied between the drain and source of a semiconductor device is measured. Then the gate voltage (pinch-off voltage VP2) is again measured after applying a reverse voltage between the gate and drain of the device. The difference DELTAVP between the pinch-off voltage before and after the reverse voltage is applied is found from the pinch-off voltages VP1 and VP2. In addition, the high-frequency gain PIdB against a saturated drain current Idss is measured and the correlation between the pinch-off voltage difference DELTAVP and PIdB/Idss is obtained. Therefore an excellent correlation is found between the DELTAVP and PIdB/Idss and the high-frequency characteristic of a MESFET can be evaluated.