EVALUATION OF SILICON WAFER

• Main Authors: FUJIKAWA TAKASHI, UMENO SHIGERU, NAKAJIMA YUTAKA, SADAMITSU SHINSUKE, HORAI MASATAKA
• Format: Patent
• Language: English
• Published: 22.04.1994
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide an evaluation method of a silicon wafer able to simply estimate an initial oxide film withstand voltage good article ratio without changing a surface condition and a heat history of a silicon wafer. CONSTITUTION:The infrared scatterer density of a certain wafer is measured by an infrared ray scattering tomography method, further, an oxide film of a prescribed thickness and a large number of MOS capacitors having electrode of a prescribed area are manufactured on the wafer so as to measure an oxide film withstand voltage good article ratio, the interrelation between the infrared scatterer density and the initial oxide film withstand voltage good article ratio is clarified, the infrared scatterer density of a silicon wafer having an unknown initial oxide film withstand voltage good article ratio is measured and the interrelation is applied so as to estimate the initial oxide film withstand voltage good article ratio. Thereby, the infrared scatterer density can be measured by the complete non-destructive inspection thus allowing it to maintain an initial state relating to the surface state of an inspected silicon wafer and a heat history.