SEMICONDUCTOR CRYSTAL GROWTH DEVICE

• Main Authors: FUJISAKI YOSHIHISA, HAGA TORU, MIYATA TOSHIMITSU, OOMORI YOSHINORI, OKUMURA KENJI, OUCHI KIYOSHI
• Format: Patent
• Language: English
• Published: 22.04.1994
• Edition: 5
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To form an excellent semiconductor layer by controlling pressure in a reaction chamber apart from the pressure of a growth chamber and observing the state of gas adsorption on a crystal surface on the field. CONSTITUTION:In a semiconductor crystal growth device with a vacuum vessel 1, a substrate supporter 5 disposed into the vacuum vessel, a reaction-gas supply means 10 and a heating means 7 for a substrate and an exhaust means 15 for the vacuum vessel, a reaction chamber 2 capable of freely changing the volume of an airtight space surrounded by a base section, a peripheral wall erected from the outer peripheral section of the base section and a substrate holding plate holding the substrate 6 is installed. The holding section 5 for holding the substrate 6, a growth surface of which is directed downward, under the state, in which the substrate 6 is brought into contact with the space of the reaction chamber, a gas-supply controller for supplying a reaction gas to the substrate held to the holding section of the base at the predetermined flow rate and time of the discharged reaction gas and a gas-discharge adjusting mechanism are mounted, the incident and reflecting windows 18a, 18b of electron rays are set up onto the peripheral wall of the reaction chamber, and a heating means is positioned and disposed to the upper section of the top plate of the reaction chamber.