LOW VAPOR PRESSURE MATERIAL SUPPLY DEVICE

• Main Authors: KITAGAWA MASATOSHI, HIRAO TAKASHI, KAMATA TAKESHI, SHIBUYA MUNEHIRO
• Format: Patent
• Language: English
• Published: 18.01.1994
• Edition: 5
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To stably supply the gas of an evaporated low-vapor pressure material by controlling the flow rate of the above-mentioned material. CONSTITUTION:After an inert gas 3 subjected to flow rate control by a flow rate controller 2 bubbles the low-vapor pressure material 6 in an ampoule 4, the flow rate of the gaseous mixture is detected by a flow rate detector 7. The change in the concn. of the evaporated low-vapor pressure material 6 in the inert gas 3 is detected by a flow rate detector 7 and the flow rate of the inert gas 3 is changed by the flow rate controller 2 in order to compensate the change-component thereof, by which the flow rate of the supplied and evaporated low-vapor pressure material 6 is kept constant. Further, the flow rate of the flow rate controller 1 is regulated in order to compensate the flow rate of the inert gas 3 changed by the flow rate controller 2, by which the flow rate of the inert gas 3 introduced into a vacuum chamber is kept constant as well.