ION BEAM SPUTTERING DEVICE

PURPOSE:To form a film of crystal with high bonding energy, such as cubic boron nitride by the ion beam sputtering system. CONSTITUTION:Prior to the adhesion of ion beam sputter grains 4 to a substrate 5, the sputter grains 4 are formed into excited state by means of a plasma source 10. On the other...

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Bibliographic Details
Main Authors ARIMATSU KEIJI, YAMAGUCHI HIROSUKE, HAGITANI TAKASHI, ISHIKAWA YASUSHI
Format Patent
LanguageEnglish
Published 12.04.1994
Edition5
Subjects
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Summary:PURPOSE:To form a film of crystal with high bonding energy, such as cubic boron nitride by the ion beam sputtering system. CONSTITUTION:Prior to the adhesion of ion beam sputter grains 4 to a substrate 5, the sputter grains 4 are formed into excited state by means of a plasma source 10. On the other hand, an ion beam is formed by ionizing reactant gas. The sputter grains 4 in excited state are irradiated with the ion beam, and these are allowed to react and deposited on the substrate 5 and formed into a film. By this method a film of cubic boron nitride, etc., as super hard material can be formed on the substrate with high adhesion, and as a result, the service life and efficiency of tools, dies, etc., can be prolonged and increased.
Bibliography:Application Number: JP19920253225