ION BEAM SPUTTERING DEVICE
PURPOSE:To form a film of crystal with high bonding energy, such as cubic boron nitride by the ion beam sputtering system. CONSTITUTION:Prior to the adhesion of ion beam sputter grains 4 to a substrate 5, the sputter grains 4 are formed into excited state by means of a plasma source 10. On the other...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
12.04.1994
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Edition | 5 |
Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To form a film of crystal with high bonding energy, such as cubic boron nitride by the ion beam sputtering system. CONSTITUTION:Prior to the adhesion of ion beam sputter grains 4 to a substrate 5, the sputter grains 4 are formed into excited state by means of a plasma source 10. On the other hand, an ion beam is formed by ionizing reactant gas. The sputter grains 4 in excited state are irradiated with the ion beam, and these are allowed to react and deposited on the substrate 5 and formed into a film. By this method a film of cubic boron nitride, etc., as super hard material can be formed on the substrate with high adhesion, and as a result, the service life and efficiency of tools, dies, etc., can be prolonged and increased. |
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Bibliography: | Application Number: JP19920253225 |