METHOD FOR GROWING SINGLE CRYSTAL OF OXIDE

• Main Authors: KUROSAWA HISAO, SATO MASAZUMI, ABE TORU, ITO KOHEI
• Format: Patent
• Language: English
• Published: 20.04.1993
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PURPOSE:To prevent the melting of a Pt (or a Pt alloy) crucible of maintaining growing melt in growing an oxide crystal such as garnet single crystal film or ferrite single crystal by liquid-phase epitaxial(LPE) method or Bridgman(Br) method. CONSTITUTION:In a method for solidifying and growing single crystal from a melt 3 prepared by heating and melting an oxide raw material packed into a metallic crucible 1, an electrode 2 made of a material different from the metallic crucible 1 is immersed in the melt 3, electric voltage obtained by subtracting an electric potential difference corresponding to thermoelectromotive force generating between the crucible 1 and the electrode 2 at the temperature of the melt 3 from potential difference between the crucible 1 and the electrode 2 immersed in the melt 3 is kept approximately zero to grow a single crystal of oxide.