METHOD AND APPARATUS FOR REMOVING ORGANIC COMPOUND FILM

PURPOSE:To effectively remove an organic compound film at a high rate without damaging a sample by introducing a radical containing a halogen element and gas containing a hydrogen element into a reaction vessel through a double tube, and setting a ratio of flow velocities of both to a special value....

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Bibliographic Details
Main Authors JINBO SADAYUKI, MORI HARUKI
Format Patent
LanguageEnglish
Published 09.04.1993
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To effectively remove an organic compound film at a high rate without damaging a sample by introducing a radical containing a halogen element and gas containing a hydrogen element into a reaction vessel through a double tube, and setting a ratio of flow velocities of both to a special value. CONSTITUTION:A radical containing a halogen element is supplied to a material 4 to be treated placed in a reaction chamber through a first tube 1 of a double tube. Gas containing a hydrogen element is supplied to the material 4 through a second tube 2. Here, a practical reaction rate is obtained in a range of 0.2<H1/H2<5 of a ratio H1/H2 of the flow velocity (H1) of the gas containing the hydrogen element to the flow velocity (H2) of the radical containing the halogen element. Thus, organic compound can be removed uniformly at a high treatment pate without damaging the material.
Bibliography:Application Number: JP19910249135