PRODUCTION AND EQUIPMENT FOR CUBIC TUNGSTEN CARBIDE FILM

• Main Authors: KAMEYAMA TETSUYA, MOTOE AKIHIRO, FUKUDA KENZO
• Format: Patent
• Language: English
• Published: 23.03.1993
• Subjects: ARTIFICIAL STONE; BORING; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; COMPOUNDS THEREOF; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; LIME, MAGNESIA; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; NON-METALLIC ELEMENTS; PERFORMING OPERATIONS; REFRACTORIES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING; TREATMENT OF NATURAL STONE; TURNING

PURPOSE:To provide a method and equipment for producing a cubic tungsten carbide film of arbitrary thickness on an arbitrary substrate using a plasma gaseous phase synthesis method. CONSTITUTION:One of W, WC, WO3 and W(CO)6 and gaseous hydrocarbon undergo vapor phase reaction in plasma to form cubic tungsten carbide which is frozen by ultra high speed cooling to deposit it on a substrate. In a chemical reactor 1 equipped with at least one means for generating thermal plasma 4, a cooled substrate 8 is placed at the tail flame part 5 of the thermal plasma 4 and the gaseous phase reaction product is cooled at ultra high speed to deposit it on the substrate.