STATIC RAM
PURPOSE:To optimize a reading operation by keeping the potential difference between bit lines not to be greatly different depending on the position of a selected memory cell in regard to an SRAM. CONSTITUTION:Besides nMOS22 as a transistor for the short-circuit of bit lines, nMOS38 is provided adjac...
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Main Author | |
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Format | Patent |
Language | English |
Published |
05.03.1993
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Subjects | |
Online Access | Get full text |
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Summary: | PURPOSE:To optimize a reading operation by keeping the potential difference between bit lines not to be greatly different depending on the position of a selected memory cell in regard to an SRAM. CONSTITUTION:Besides nMOS22 as a transistor for the short-circuit of bit lines, nMOS38 is provided adjacent to the memory cell 6; when the memory cell between the nMOS22 and nMOS38 is selected, nMOS22 is turned on, and when the memory cell between the nMOS38 and a sense amplifier circuit 23 is selected, nMOS38 is turned on. |
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Bibliography: | Application Number: JP19910209321 |