STATIC RAM

PURPOSE:To optimize a reading operation by keeping the potential difference between bit lines not to be greatly different depending on the position of a selected memory cell in regard to an SRAM. CONSTITUTION:Besides nMOS22 as a transistor for the short-circuit of bit lines, nMOS38 is provided adjac...

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Bibliographic Details
Main Author TAKASE RIKIO
Format Patent
LanguageEnglish
Published 05.03.1993
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE:To optimize a reading operation by keeping the potential difference between bit lines not to be greatly different depending on the position of a selected memory cell in regard to an SRAM. CONSTITUTION:Besides nMOS22 as a transistor for the short-circuit of bit lines, nMOS38 is provided adjacent to the memory cell 6; when the memory cell between the nMOS22 and nMOS38 is selected, nMOS22 is turned on, and when the memory cell between the nMOS38 and a sense amplifier circuit 23 is selected, nMOS38 is turned on.
Bibliography:Application Number: JP19910209321