METHOD AND DEVICE FOR FORMING FILM BY GAS DEPOSITION

• Main Author: FUCHIDA HIDETSUGU
• Format: Patent
• Language: English
• Published: 23.02.1993
• Subjects: CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; GLASS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; METALLURGY; MINERAL OR SLAG WOOL; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To form a uniform film on a substrate by providing a shutter to a grain transport pipe and closing the shutter to discharge the grain on the upstream side of the shutter outside the pipe and the grain on the downstream side outside the pipe by a gas introduced into the pipe. CONSTITUTION:The gas G as the film material is transported along with a carrier gas 8 through a transport pipe 3 and injected from a nozzle 10 to form a film on a substrate 15. A shutter 17 free to open and close is provided to the pipe 3. When the shutter is closed, the grain G in the pipe 3 on the upstream side of the shutter 17 is discharged outside the pipe through a pipe 19, and the grain G in the pipe 3 on the downstream side of the shutter 17 is discharged from a discharge pipe 24 along with the carrier gas from a gas inlet pipe 21 connected to the pipe 3 on the downstream side. Consequently, the grain G is not aggregated or deposited in the pipe 3, hence the pipe 3 is never clogged, and the grain G is smoothly transported to form a uniform film on the substrate 15.