LOAD CONTROL POWER SUPPLY

PURPOSE:To realize boosting and maintaining the gate electrode voltage of N-channel MOSFET to be used as high-side switch without increasing a chip area and while a high-speed operation is made possible and ON resistance is held low. CONSTITUTION:A capacitor to be charged with electricity, when a so...

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Bibliographic Details
Main Author HIROTA MASAKI
Format Patent
LanguageEnglish
Published 12.02.1993
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Summary:PURPOSE:To realize boosting and maintaining the gate electrode voltage of N-channel MOSFET to be used as high-side switch without increasing a chip area and while a high-speed operation is made possible and ON resistance is held low. CONSTITUTION:A capacitor to be charged with electricity, when a source electrode 7 reaches a ground potential, is provided as boosting circuit 11 and a potential detection circuit 12 for monitoring a gate-source voltage Vgs is also provided at an apparatus. When Vgs drops to a predetermined value even while the apparatus operates on full duty, a gate control circuit 13 lowers the potential of a gate electrode 8 by a signal from the potential detection circuit 12 to turn OFF MOSFET1 to restart the boosting circuit 11.
Bibliography:Application Number: JP19910206580