JPH05347258

• Main Author: SASAKI TAKAE
• Format: Patent
• Language: English
• Published: 27.12.1993
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PURPOSE:To provide a method of forming an in-situ doped polycrystalline silicon film excellent in surface flatness and crystallinity and low in resistance. CONSTITUTION:SiH4 or Si2H6 where dopant gas (PH3, AsH3, or B2H6) is added is made to flow onto a single crystal silicon substrate 21 or a silicon oxide film 22 placed in a reaction overt and kept at a prescribed temperature to form a first in-situ doped amorphous silicon film through a thermal decomposition reaction. The reaction oven is exhausted and cooled down. The reaction overt is heated up to a prescribed temperature, then SiH4 or Si2H6 where dopant gas (PH3, AsH3, or B2H6) is added is made to flow onto a first doped amorphous silicon film to form a second in-situ doped amorphous silicon film through a thermal decomposition reaction. Then, the silicon substrate 21 is subjected to heat treatment to turn the doped amorphous silicon film polycrystalline for the formation of an in-situ doped polycrystalline silicon film 23.