DEVELOPING APPARATUS

PURPOSE:To develop a large-diameter wafer with little irregularity and with high accuracy in a developing process for a photolithographic process when a semiconductor device is manufactured. CONSTITUTION:Before a wafer 1 to be treated is developed by using a developing solution, the surface of the w...

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Bibliographic Details
Main Author MATSUDA KIMIHIRO
Format Patent
LanguageEnglish
Published 26.11.1993
Edition5
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To develop a large-diameter wafer with little irregularity and with high accuracy in a developing process for a photolithographic process when a semiconductor device is manufactured. CONSTITUTION:Before a wafer 1 to be treated is developed by using a developing solution, the surface of the wafer is brought into contact with air bubbles 7 in a surface-active agent, and the surface-active agent is made to adhere evenly to the whole surface of the wafer. The developing solution is brought uniformly into contact with the wafer; after that, the rear of the wafer 1 to be treated is sucked and held inside a developing and rinsing tank 11 whose area is larger than the diameter of the wafer; the whole surface is once brought into contact with the developing solution; the wafer is developed without causing a difference in the time during which the face of the wafer is brought into contact with the developing solution during a developing operation.
Bibliography:Application Number: JP19920142159