JPH05304194

• Main Author: ITO FUMIO
• Format: Patent
• Language: English
• Published: 16.11.1993
• Edition: 5
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PURPOSE:To evaluate the electrical stability of an insulating film and stability against the change of film quality relatively by forming the insulating film onto a semiconductor substrate having required carrier concentration and measuring the change of sheet resistance before and after the film is formed and before and after various environmental tests of moisture resistance, heat resistance, etc. CONSTITUTION:An insulating film is shaped onto a semiconductor substrate having a required carrier concentration, the rate of change of sheet resistance before and after the insulating film is formed is measured, and the effect of interface state density on the substrate and a film interface as the cause of the characteristic deterioration of a device is evaluated. The variation of film quality is estimated relatively from relationship that the composition change of the film is augmented when the alteration of sheet resistance is increased before and after the environmental test (such as moisture resistance) of a wafer after the insulating film is shaped and the composition change of the film is diminished when the alteration of sheet resistance is reduced. Accordingly, the presence of interface state density on the film and the substrate interface can be valuated from the rates of changes before and after the film formation of sheet resistance, and the change of film quality can be estimated by the environmental test by the rates of changes before and after various environmental tests.