JPH05299423

• Main Author: NUNOKAWA MITSUJI
• Format: Patent
• Language: English
• Published: 12.11.1993
• Edition: 5
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROFORMING; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; METALLURGY; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS; SEMICONDUCTOR DEVICES

PURPOSE:To improve the uniformity of the thickness of a metal plated layer on the surface of a wafer and to provide the method and apparatus for automating the metal plating treatment, in the improvements on the method and apparatus for forming an electrode film. CONSTITUTION:In this method, a process wherein a conductive layer 2 is formed on both faces of a semiconductor wafer 1, a process wherein the semiconductor wafer 1 is held by a suction pad 7 which will be a cathode electrode 6 and is the wafer is rotated around an axis vertical to the wafer surface, and a process wherein a plating solution is jet on the surface of the semiconductor wafer 1 to form a metal layer through an anode electrode 4 on the surface of the wafer 1 are included. This apparatus is so structured as to have a function as a metal plated layer forming equipment for performing these processes.