JPH05299423

PURPOSE:To improve the uniformity of the thickness of a metal plated layer on the surface of a wafer and to provide the method and apparatus for automating the metal plating treatment, in the improvements on the method and apparatus for forming an electrode film. CONSTITUTION:In this method, a proce...

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Bibliographic Details
Main Author NUNOKAWA MITSUJI
Format Patent
LanguageEnglish
Published 12.11.1993
Edition5
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To improve the uniformity of the thickness of a metal plated layer on the surface of a wafer and to provide the method and apparatus for automating the metal plating treatment, in the improvements on the method and apparatus for forming an electrode film. CONSTITUTION:In this method, a process wherein a conductive layer 2 is formed on both faces of a semiconductor wafer 1, a process wherein the semiconductor wafer 1 is held by a suction pad 7 which will be a cathode electrode 6 and is the wafer is rotated around an axis vertical to the wafer surface, and a process wherein a plating solution is jet on the surface of the semiconductor wafer 1 to form a metal layer through an anode electrode 4 on the surface of the wafer 1 are included. This apparatus is so structured as to have a function as a metal plated layer forming equipment for performing these processes.
Bibliography:Application Number: JP19920103284