JPH05295550

• Main Authors: FUCHIDA HIDETSUGU, ODA MASAAKI
• Format: Patent
• Language: English
• Published: 09.11.1993
• Edition: 5
• Subjects: BLASTING; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; FURNACES; FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; HEATING; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; KILNS; LIGHTING; MECHANICAL ENGINEERING; METALLURGY; OPEN SINTERING OR LIKE APPARATUS; OVENS; RETORTS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; WEAPONS

PURPOSE:To optimize the relative positions of the gas inlet of a transporting pipe and the vapor rising from a material to be evaporated by providing an adjusting mechanism for adjusting the relative positions of the evaporating source in a superfine particle forming chamber and the gas inlet of a transporting pipe and constituting the gas inlet movable by the operation from the outside. CONSTITUTION:This gas deposition device is formed of the evaporating source H to store the material to be evaporated in the superfine particle forming chamber 14 and the transporting pipe 7, etc. The gas inlet 7a for transporting the material (for example, metal) evaporated from the above-mentioned evaporating source H into the film forming chamber by the carrier gas introduced in the above-mentioned forming chamber is provided in this transporting pipe 7. Further, the adjusting mechanism 1 is provided in the above-mentioned device, by which the relative positions between the evaporating source H and the gas inlet 7a is adjusted.