JPH05251394

PURPOSE:To embody uniform and high speed etching and high throughput required for dry etching for the formation of via hole electrodes for GaAs group devices in terms of a dry etching device which adopts an RIE system. CONSTITUTION:Around a cathode electrode and an anode electrode 1, there is instal...

Full description

Saved in:
Bibliographic Details
Main Author NAKAMURA GENSHIRO
Format Patent
LanguageEnglish
Published 28.09.1993
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PURPOSE:To embody uniform and high speed etching and high throughput required for dry etching for the formation of via hole electrodes for GaAs group devices in terms of a dry etching device which adopts an RIE system. CONSTITUTION:Around a cathode electrode and an anode electrode 1, there is installed a disk-shaped and mesh-like plasma sealing electrode 2 having a grand potential in order to contain the plasma locally. Furthermore, there is installed a wafer bringing-in and bringing-out passage so as to load and unload a workpiece or wafer 112 to the cathode electrode in continuous mode. What is more, there is installed a magnetic field/electrode supply system 8 on the way of the passage 3.
Bibliography:Application Number: JP19920084801