JPH05235665

PURPOSE:To obtain essential high-sensitivity with simple configuration by setting a depression type MOSFET whose gate and source are connected to the drain of an amplifier MOSFET as a load means, and setting the source at the same potential as substrate potential. CONSTITUTION:A bias voltage Vs is s...

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Bibliographic Details
Main Authors HASEGAWA ATSUSHI, KITAJIMA KENJI, IZAWA TETSURO, FUJII TATSUHISA, TAKEMOTO KAYAO, MATSUMOTO KATSUMI
Format Patent
LanguageEnglish
Published 10.09.1993
Edition5
Subjects
AMPLIFIERS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
PULSE TECHNIQUE
STATIC STORES
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Summary:PURPOSE:To obtain essential high-sensitivity with simple configuration by setting a depression type MOSFET whose gate and source are connected to the drain of an amplifier MOSFET as a load means, and setting the source at the same potential as substrate potential. CONSTITUTION:A bias voltage Vs is supplied to the gate of the amplifier MOSFET Q5 intermittently via a switching MOSFET Q6. The depression type MOSFET Q4 functioning as a constant current source by connecting the gate to the source to heighten the open gain of an inversion amplifier circuit is provided at the drain of the FET Q5 as a load. The FET Q4 consists of FERTs Q4A, Q4B, and it is provided with the same potential as the substrate potential at a connecting part VB with the drain of the FET Q5, and it is cascodeconnected. The voltage signal Vs supplied to the gate of the FET Q5 is amplified by inversion circuit FETs Q5, Q4, and it is outputted as a signal Vout. Such inversion amplifier is comprised by attaching a gain in accordance with C2/C3 setting a capacitor C2 as an input capacitor and a capacitor C3 as a feedback capacitor.
Bibliography:Application Number: JP19920213995