JPH05235320

PURPOSE:To reduce the causes of a dark current and prevent the drop of a dynamic range by forming an element isolating region so that it may surround a nonactive region. CONSTITUTION:For the width of an element isolating region 5 between an accumulating part 2 and a section 11 freefrom element isola...

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Bibliographic Details
Main Author YAMAWAKI MASAO
Format Patent
LanguageEnglish
Published 10.09.1993
Edition5
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To reduce the causes of a dark current and prevent the drop of a dynamic range by forming an element isolating region so that it may surround a nonactive region. CONSTITUTION:For the width of an element isolating region 5 between an accumulating part 2 and a section 11 freefrom element isolating region, the element isolating region 5 is made small as far as possible, using the minimum dimension substantially on the same level as the width WISO of the element isolating region 5 between adjacent photodiode 1, whereby the area where the element isolating region 5 and an accumulating gate electrode 6 overlap each other is lessened. By doing it so, the element isolating region 5 subjected to the influence of the application of the bias voltage to the accumulating gate 6 lessens, as a result, a dark current can be reduced largely, which ceases to lower the dynamic range, and the performance of the sensor can improve.
Bibliography:Application Number: JP19920072760