MASK FOR FORMATION OF THIN FILM PATTERN AND FORMATION OF THIN FILM USING SAME MASK

• Main Author: ANADA TAKAHIRO
• Format: Patent
• Language: English
• Published: 07.09.1993
• Subjects: ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR; METALLURGY; PHYSICS; PRINTED CIRCUITS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TARIFF METERING APPARATUS; TESTING

PURPOSE:To prevent the infiltration of an etching soln. and deposits into the space between the side of a substrate and a mask by using a mask closely stuck to the side of the substrate and to realize the formation of a fine thin film pattern at a low cost. CONSTITUTION:An insulating film 4 is formed on a substrate 3 of a magnetic body. A magnetized mask 1 having a prescribed pattern is place on the insulating film 4 to tightly attack the mask 1 to the surface of the insulating film 4 by magnetic force worked between the substrate 3 and the mask 1. In this state, e.g. an alloy of Ni-Cr is deposited on the mask 1 and the insulating film 4 by vapor deposition, sputtering or the like. After that, at the time of peeling the mask 1 from the surface of the insulating film 4, only a deposited film is left on the insulating film 4, which is formed into a thin film resistance pattern.