PRODUCTION OF THIN TANTALUM OXIDE FILM

• Main Authors: KITAGAWA MASATOSHI, HIRAO TAKASHI, KAMATA TAKESHI, SHIBUYA MUNEHIRO
• Format: Patent
• Language: English
• Published: 31.08.1993
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To obtain a thin tatalum oxide film of high dielectric constant under controlling the thickness of a SiO2 film present at the interface to a low level. CONSTITUTION:The surface of a polysilicon substrate 5 is treated, in a vacuum chamber 1, with hydrogen 13 and argon gas 18's plasma to remove the naturally oxidized film on this surface. Ta(OC2H5)5 in an ampul 3 is bubbled by Ar inert gas 4 and introduced into the vacuum chamber 1 where the compound is thermally decomposed and built up as a thin tantalum oxide film of low oxidation degree on the substrate 5; O2 gas 12 is then introduced into this chamber followed by application of electric field between electrodes 15 and 16, and the above thin film is irradiated with the resultant O2 gas put to plasma decomposition, thus promoting oxidation.