METHOD OF ETCHING THIN FILM

PURPOSE:To prevent a multi-layer film from peeling and make smooth the level difference in a method for etching a thin film. CONSTITUTION:The method has a process of patterning a resist film 4 in reverse taper shape on a substrate 1 whereupon a bottom layer film 2 and a top layer film 3 are successi...

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Bibliographic Details
Main Authors HODATE MARI, NAGAHIRO NORIO, WATANABE KAZUHIRO
Format Patent
LanguageEnglish
Published 13.08.1993
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To prevent a multi-layer film from peeling and make smooth the level difference in a method for etching a thin film. CONSTITUTION:The method has a process of patterning a resist film 4 in reverse taper shape on a substrate 1 whereupon a bottom layer film 2 and a top layer film 3 are successively accumulated, a process of patterning the top layer film 3 to be the same size as the bottom side of the resist film 4 by isotropic etching using the resist film 4 as a mask and a process of patterning the bottom layer film 2 to be the same size as the top side of the resist film 4 by anisotropic etching using the resist film 4 as a mask.
Bibliography:Application Number: JP19920011483