SEMICONDUCTOR STORAGE DEVICE

PURPOSE:To provide a semiconductor storage device which has a redundant circuit capable of replacing a defect bit of an arbitrary memory block by a redundant word line of other memory block. CONSTITUTION:The addressing system of redundant word lines RWLa and RWLb are independently provided with resp...

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Bibliographic Details
Main Author FUJITA SHIGEAKI
Format Patent
LanguageEnglish
Published 06.08.1993
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Summary:PURPOSE:To provide a semiconductor storage device which has a redundant circuit capable of replacing a defect bit of an arbitrary memory block by a redundant word line of other memory block. CONSTITUTION:The addressing system of redundant word lines RWLa and RWLb are independently provided with respect to the addressing system of a word line WL of memory cell array blocks 1a and 1b. The outputs of replacing circuits 10a and 10b which include redundant type selecting circuits 3a and 3b and replace address program circuits 4a and 4b are respectively given to the direct redundant word lines RWLa and RWLb without going through decoders 2a and 2b as redundant word line activation signals RAa and RAb. Moreover, the output of a normal memory cell non-selecting circuit 11 is given to the decoders 2a and 2b as decoder non-activation signal DA.
Bibliography:Application Number: JP19920246831