FORMATION OF MANGANESE COBALT OXIDE THIN FILM

• Main Authors: YAMANAKA SEIJI, YONEZAWA MASA
• Format: Patent
• Language: English
• Published: 22.06.1993
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; RESISTORS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PURPOSE:To inexpensively form a manganese cobalt oxide thin film which is dense and homogeneous over a wide range with a simple operation. CONSTITUTION:A manganese compd. such as manganese nitrate and a cobalt compd. such as cobalt nitrate is dissolved in a polyhydric alcohol such as ethylene glycol to prepare the alcohol soln. A carboxylic acid such as formic acid is added to the soln., and then an alcohol such as methanol is preferably added to the liq. mixture to prepare a coating soln. The coating soln. is applied on the surface of a heat-resistant substrate to form a coating film. The coated substrate is thermally dried to form a precursor for the multiple oxide of manganese and cobalt, and the precursor is calcined at 600-1000 deg.C to obtain a manganese cobalt oxide thin film.