MANUFACTURE OF SEMICONDUCTOR DEVICE

PURPOSE:To provide a method with which a semiconductor, especially an epitaxial base transistor(EBT) having a high cut-off frequency, is easily manufactured in an excellent controllable manner by a method wherein the thickness of and intrinsic base layer is thinned off and the outer base resistance...

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Bibliographic Details
Main Authors ARIMOTO YOSHIHIRO, SUGII TOSHIHIRO
Format Patent
LanguageEnglish
Published 18.06.1993
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PURPOSE:To provide a method with which a semiconductor, especially an epitaxial base transistor(EBT) having a high cut-off frequency, is easily manufactured in an excellent controllable manner by a method wherein the thickness of and intrinsic base layer is thinned off and the outer base resistance is decreased. CONSTITUTION:The titled manufacturing method is a method for manufacturing a semiconductor device, and a process in which a one-conductivity (P) type semiconductor layer 3, which is thicker than the final base layer, is formed and a process in which an emitter region is obtained by forming an n-type region 6 by introducing reverse conductivity (n) type impurities (As and the like) on the emitter side of the base region of the above-mentioned epitaxial growth layer through the aperture 5 of an insulating film 4 for a mask, are included therein. In this case, a process in which the impurity density of the epitaxial layer is lowered on the collector side and it is raised on the emitter side, can be adopted.
Bibliography:Application Number: JP19910291112