DYNAMIC SEMICONDUCTOR MEMORY

PURPOSE:To prevent the degradation of breakdown strength and to improve the reliability of a word line by corresponding to an operational power source voltage level or an external signal, boosting selectively a word line driving signal and eliminating the usual application of high voltage to the wor...

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Bibliographic Details
Main Author ICHIGUCHI TETSUICHIRO
Format Patent
LanguageEnglish
Published 18.06.1993
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PURPOSE:To prevent the degradation of breakdown strength and to improve the reliability of a word line by corresponding to an operational power source voltage level or an external signal, boosting selectively a word line driving signal and eliminating the usual application of high voltage to the word line. CONSTITUTION:The word line driving signal RX is generated corresponding to an external row address strobe signal (/RAS) by an RX generating circuit 511 in a word line driving signal generating circuit 705 generating the word line driving signal RX. Further, whether the word line driving signal RX is boosted or not is discriminated corresponding to the operational power source voltage level or the external signal by a discrimination circuit 701. Then, the word line driving signal RX is boosted corresponding to the output of the word line driving signal RX and the discrimination circuit 701 by a boosting circuit 702. Then, the word line driving signal RX is boosted to the operational power source level or above only when the discrimination circuit 701 decides as necessity and not maintained to high voltage at ordinary times.
Bibliography:Application Number: JP19910316978